Strain investigation of InGaAs/GaAs multiple quantum wells by reciprocal space mapping

Authors

Aleena Maria Laganapan National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

The goal is to provide a less destructive and less labor intensive alternative to Transmission Electron Microscopy (TEM) in investigating strained materials. To do this we use an x-ray diffraction technique known as reciprocal space mapping. We demonstrate this using three epitaxially grown InGaAs/GaAs multiple quantum wells (MQW) with different composition fractions x. The reciprocal space maps (RSM) show that the sample with the highest x experiences the smallest strain and is 20.8% relaxed. The rest of the samples demonstrate the case of fully-strained lattices.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2C-5

Section

Condensed Matter and Materials Physics

Published

2011-10-24

How to Cite

[1]

AM Laganapan, MA Tumanguil, and A Somintac, Strain investigation of InGaAs/GaAs multiple quantum wells by reciprocal space mapping, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2C-5 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2C-5.