GaAs p-i(Multiple Quantum Well)-n on glass substrate by epitaxial lift-off for photovoltaic applications

Authors

Jorge Michael Presto National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

In this paper, we have successfully fabricated a GaAs p-i(MQW)-n on a glass substrate using epitaxial lift-off (ELO) process. Room temperature measurement of the current-voltage characteristic of the GaAs p-i(MQW)-n on glass substrate demonstrated diode ideality factor of 4.9, shunt resistance of 476,678 Ω and series resistance of 3,348 Ω with the latter obtained under dark condition. Photocurrent measurement showed a peak at 8400Å corresponding to the GaAs MQW inside the active region of the lifted-off sample on glass substrate indicating the effectiveness of the ELO process.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2C-3

Section

Condensed Matter and Materials Physics

Published

2011-10-24

How to Cite

[1]

JM Presto, JD Vasquez, and A Somintac, GaAs p-i(Multiple Quantum Well)-n on glass substrate by epitaxial lift-off for photovoltaic applications, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2C-3 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2C-3.