Terahertz radiation from MBE-grown p-InAs on GaAs/GaSb excited by 800-nm and 1.55 µm femtosecond lasers

Authors

Cyril Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez, Jr. ⋅ PH Material Science and Engineering Program, University of the Philippines Diliman
Ramon delos Santos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH Department of Physics, De La Salle University
Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil ⋅ PH Material Science and Engineering Program, University of the Philippines Diliman
Christopher Que ⋅ PH Department of Physics, De La Salle University
Valynn Mag-usara ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

InAs (p-doped) is grown on a GaAs-buffered GaSb substrate via molecular beam epitaxy. The heterostructure is tested as an emitter in a terahertz time-domain spectroscopy system with a 1550-nm-wavelength femtosecond laser. We achieve an enhancement in the terahertz radiation intensity of approximately twice compared to that of bulk p-InAs. Pump power dependence of the THz signal (800-nm femtosecond laser excitation) show similar trend in the saturation fluence of the samples. Azimuthal-angle measurements reveal surge current mechanism via photo-Dember effect.

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Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Opportunities and challenges in physics collaboration and research
7-10 June 2017, Cebu City

Mabuhay! This is our first issue published using PKP's Online Journal Systems (OJS). Full online access to PDF articles is provided to registered Paperview users.

Article ID

SPP-2017-PA-41

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2017-06-07

How to Cite

[1]

C Sadia, L Lopez, R delos Santos, J Muldera, A De Los Reyes, MA Tumanguil, C Que, V Mag-usara, M Tani, E Estacio, A Somintac, and A Salvador, Terahertz radiation from MBE-grown p-InAs on GaAs/GaSb excited by 800-nm and 1.55 µm femtosecond lasers, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-PA-41 (2017). URL: https://proceedings.spp-online.org/article/view/267.