Terahertz radiation from MBE-grown p-InAs on GaAs/GaSb excited by 800-nm and 1.55 µm femtosecond lasers

Authors

Cyril Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez, Jr. ⋅ PH Material Science and Engineering Program, University of the Philippines Diliman
Ramon delos Santos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH Department of Physics, De La Salle University
Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil ⋅ PH Material Science and Engineering Program, University of the Philippines Diliman
Christopher Que ⋅ PH Department of Physics, De La Salle University
Valynn Mag-usara ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

InAs (p-doped) is grown on a GaAs-buffered GaSb substrate via molecular beam epitaxy. The heterostructure is tested as an emitter in a terahertz time-domain spectroscopy system with a 1550-nm-wavelength femtosecond laser. We achieve an enhancement in the terahertz radiation intensity of approximately twice compared to that of bulk p-InAs. Pump power dependence of the THz signal (800-nm femtosecond laser excitation) show similar trend in the saturation fluence of the samples. Azimuthal-angle measurements reveal surge current mechanism via photo-Dember effect.

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Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2017-PA-41

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2017-06-07

How to Cite

[1]

C Sadia, L Lopez, R delos Santos, J Muldera, A De Los Reyes, MA Tumanguil, C Que, V Mag-usara, M Tani, E Estacio, A Somintac, and A Salvador, Terahertz radiation from MBE-grown p-InAs on GaAs/GaSb excited by 800-nm and 1.55 µm femtosecond lasers, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-PA-41 (2017). URL: https://proceedings.spp-online.org/article/view/267.