Terahertz radiation from MBE-grown p-InAs on GaAs/GaSb excited by 800-nm and 1.55 µm femtosecond lasers

Authors

  • Cyril Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Lorenzo Lopez, Jr. ⋅ PH Material Science and Engineering Program, University of the Philippines Diliman
  • Ramon delos Santos ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Joselito Muldera ⋅ PH Department of Physics, De La Salle University
  • Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Mae Agatha Tumanguil ⋅ PH Material Science and Engineering Program, University of the Philippines Diliman
  • Christopher Que ⋅ PH Department of Physics, De La Salle University
  • Valynn Mag-usara ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
  • Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Keywords:

molecular beam epitaxy, indium arsenide, ultrafast spectroscopy

Abstract

InAs (p-doped) is grown on a GaAs-buffered GaSb substrate via molecular beam epitaxy. The heterostructure is tested as an emitter in a terahertz time-domain spectroscopy system with a 1550-nm-wavelength femtosecond laser. We achieve an enhancement in the terahertz radiation intensity of approximately twice compared to that of bulk p-InAs. Pump power dependence of the THz signal (800-nm femtosecond laser excitation) show similar trend in the saturation fluence of the samples. Azimuthal-angle measurements reveal surge current mechanism via photo-Dember effect.

Proceedings SPP 2017 Cover

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Published

2017-06-07

Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

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How to Cite

[1]
“Terahertz radiation from MBE-grown p-InAs on GaAs/GaSb excited by 800-nm and 1.55 µm femtosecond lasers”, Proc. SPP, vol. 35, no. 1, p. SPP-2017-PA-41, Jun. 2017, Accessed: Apr. 02, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/267