Investigation of strain in an oxide-confined GaAs/AlGaAs PIN heterostructure through spot-dependent photoluminescence spectroscopy

Authors

Horace Andrew F. Husay ⋅ PH National Institute of Physics, University of the Philippines Diliman
Vernalyn T. Copa ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
John Paul R. Ferrolino ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Gerald Angelo R. Catindig ⋅ PH National Institute of Physics, University of the Philippines Diliman
Karl Cedric P. Gonzales ⋅ PH National Institute of Physics, University of the Philippines Diliman
Neil Irvin F. Cabello ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kerphy Liandro M. Patrocenio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rommel J. Jagus ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the observation of strain in an oxide-confined gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) PIN heterostructure through spot-dependent photoluminescence (PL). The PIN structure was grown via molecular beam epitaxy. The layers were etched into 250 μm cylindrical mesa structures and thermally oxidized. Room temperature photoluminescence (PL) measurements were done using a micro-PL setup equipped with a motorized stage. The AlGaAs PL peak at the oxidized region of the PIN structure was observed to redshift by ~10.3 meV from the PL measured at the unoxidized region located at the center of the mesa. This redshift is attributed to the tensile strain on the AlGaAs layers on top of the aluminum arsenide (AlAs) layer that has been converted to aluminum oxide (Al₂O₃). This technique provides a quick way of measuring the strain in heterojunction-based devices such as vertical-cavity surface emitting lasers.

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Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2017-PA-35

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2017-06-07

How to Cite

[1]

HAF Husay, VT Copa, JPR Ferrolino, GAR Catindig, KCP Gonzales, NIF Cabello, KLM Patrocenio, RJ Jagus, AA Salvador, and AS Somintac, Investigation of strain in an oxide-confined GaAs/AlGaAs PIN heterostructure through spot-dependent photoluminescence spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-PA-35 (2017). URL: https://proceedings.spp-online.org/article/view/265.