Photoreflectance lineshape analysis of modulation-doped GaAs/AlGaAs heterostructures

Authors

Miguel Bacaoco ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer S Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Lineshape analysis was conducted on the experimental photoreflectance spectra of modulatiod-doped heterostructures using empirical lineshape models. From the fitting, the GaAs band gap energy was calculated to be 1.42 eV. Fitting parameter ħΩ was also used to calculate the electric field F_ħΩ which was then compared to the value obtained from FKO linear regression analysis. The comparison showed % error ranging from 5% to 10%. The relationship between the electric field and spacer layer thickness was then observed to be inversely proportional as shown by the fitting and from analytic calculation.

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Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2017-PA-29

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2017-06-07

How to Cite

[1]

M Bacaoco, AS Somintac, AA Salvador, and ES Estacio, Photoreflectance lineshape analysis of modulation-doped GaAs/AlGaAs heterostructures, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-PA-29 (2017). URL: https://proceedings.spp-online.org/article/view/248.