Photocarrier dynamics in MBE-grown GaAs-Al_xGa_1-xAs quantum well investigated via temperature-dependent photoluminescence and terahertz time-domain spectroscopy

Authors

Alexander E. De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jessica Pauline C. Afalla ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Lorenzo P. Lopez, Jr. ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
John Daniel E. Vasquez ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Maria Angela B. Faustino ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Hannah R. Bardolaza ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the temperature effects on the dynamics and recombination characteristics of molecular beam epitaxy (MBE)-grown GaAs/Al_xGa_1-xAs quantum well using photoluminescence and terahertz time-domain spectroscopy. The photoluminescence spectra undergo a redshift as temperature increases, as described by the Varshni equation. Furthermore, the terahertz emission was found to increase as temperature increases. This result is attributed to the increase in the number of phonon acting as scattering sites in the crystal lattice at higher temperatures, thus effectively decreasing carrier recombination lifetime.

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Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2017-2C-07

Section

Ultrafast Optics, Photonics, and Terahertz Physics

Published

2017-06-07

How to Cite

[1]

AE De Los Reyes, JPC Afalla, LP Lopez, JDE Vasquez, MAB Faustino, HR Bardolaza, RV Sarmago, M Tani, AS Somintac, AA Salvador, and ES Estacio, Photocarrier dynamics in MBE-grown GaAs-AlxGa1-xAs quantum well investigated via temperature-dependent photoluminescence and terahertz time-domain spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-2C-07 (2017). URL: https://proceedings.spp-online.org/article/view/237.