Effects of post-deposition annealing on the structural properties of femtosecond pulsed laser deposited ZnO on silicon substrates

Authors

Joseph Aban de Mesa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jessa Jayne Miranda ⋅ PH National Institute of Physics, University of the Philippines Diliman
Hernanie Salazar, Jr. ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman
Wilson Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Undoped zinc oxide (ZnO) was successfully deposited on silicon (100) for 3 hours via femtosecond pulsed laser deposition (fs-PLD). The deposition was carried out with oxygen background gas at room temperature. The deposited samples were annealed inside a tube furnace at 400°C and 500°C. X-ray diffraction analysis (XRD) was used to characterize the structural properties of deposited samples. The XRD spectra revealed (110) peak of ZnO on silicon (100). The FWHM of the (110) peak decreases with annealing temperature indicating that the structure of ZnO deposits were dependent on the annealing temperature. The deviation of diffraction angle of (110) peak with annealing temperature can be attributed to the induced thermal stress by the silicon substrate.

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Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2017-PA-19

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2017-06-07

How to Cite

[1]

JA de Mesa, JJ Miranda, H Salazar, R Sarmago, and W Garcia, Effects of post-deposition annealing on the structural properties of femtosecond pulsed laser deposited ZnO on silicon substrates, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-PA-19 (2017). URL: https://proceedings.spp-online.org/article/view/232.