Investigation on the interface electric field of aluminum-doped zinc oxide/p-type gallium arsenide (AZO/p-GaAs) heterojunctions for terahertz emission applications

Authors

Erick John Carlo D Solibet ⋅ PH National Institute of Physics, University of the Philippines Diliman
Archel Susvilla Escaro ⋅ PH National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez, Jr. ⋅ PH National Institute of Physics, University of the Philippines Diliman and Materials Science and Engineering Program, University of the Philippines Diliman
Angela Faustino ⋅ PH National Institute of Physics, University of the Philippines Diliman and Materials Science and Engineering Program, University of the Philippines Diliman
Hannah Rillera ⋅ PH National Institute of Physics, University of the Philippines Diliman and Materials Science and Engineering Program, University of the Philippines Diliman
Neil Irvin Cabello ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Aluminum-doped zinc oxide (AZO) films were deposited on p-type GaAs substrates with different Al% via spray pyrolysis to investigate the dependence of terahertz (THz) emission on the interface electric field of AZO/p-GaAs heterostructures. Photoreflectance spectroscopy was used to measure the electric field at the interface of the heterojunctions. Reflection-geometry THz time-domain spectroscopy showed that the THz intensity gradually increases with Al doping and peaks at 2% Al, which coincides with the maximum electric field. Comparison of THz intensity and electric field confirms that the THz emission in AZO/p-GaAs is governed by photocarrier drift. In addition, it was shown that photocarrier drift is a dominant factor in the observed THz intensity enhancement.

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Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2017-PA-06

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2017-06-07

How to Cite

[1]

EJCD Solibet, AS Escaro, L Lopez, A Faustino, H Rillera, NI Cabello, A De Los Reyes, E Estacio, A Somintac, and A Salvador, Investigation on the interface electric field of aluminum-doped zinc oxide/p-type gallium arsenide (AZO/p-GaAs) heterojunctions for terahertz emission applications, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-PA-06 (2017). URL: https://proceedings.spp-online.org/article/view/227.