Femtosecond pulsed laser deposition of Nd:YAG on silicon with in-situ and post deposition heat treatment

Authors

  • Arriane P. Lacaba National Institute of Physics, University of the Philippines Diliman
  • Lean L. Dasallas National Institute of Physics, University of the Philippines Diliman
  • Wilson O. Garcia National Institute of Physics, University of the Philippines Diliman

Abstract

Nd:YAG on silicon was grown using femtosecond pulsed laser deposition with in-situ substrate heat treatment and post-deposition substrate heat treatment. The thin film crystallinity, surface morphology and particle size distribution were characterized using x-ray diffraction analysis, scanning electron microscopy and image analysis, respectively. XRD plot showed preferential growth orientation of the thin film at YAG (521). SEM micrograph reveal that post deposition heat treatment result to morphological reorientation, minimized clustering and melting of the smaller particles on top of large particles. Lastly, it was shown that the fs-PLD is a method that can be used in the growth of nanocrystalline particles even at low substrate temperature.

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Issue

Article ID

SPP2014-PB-06

Section

Poster Session PB

Published

2014-10-17

How to Cite

[1]
AP Lacaba, LL Dasallas, and WO Garcia, Femtosecond pulsed laser deposition of Nd:YAG on silicon with in-situ and post deposition heat treatment, Proceedings of the Samahang Pisika ng Pilipinas 32, SPP2014-PB-06 (2014). URL: https://proceedings.spp-online.org/article/view/1878.