Flex sensing application of the piezoresistive property of AlN

Abstract

This study develops a flex sensor based on Aluminum Nitride (AlN). The response was based on the piezoresistive property of the AlN. AlN thin film was fabricated into device and was assembled in a cantilever setup. In this setup, resistance was simulataneously measured while masses were successively added to deflect the cantilever. It was found that the tensile stress induced on the device increases the resistance value, which is consistent to the macroscopic gauge relationship of relative resistance and relative length. Similar trends of the response was also found at elevated temperature of the device.