Subpicosecond carrier lifetime measurements using transient reflectance spectroscopy of MBE-grown low temperature GaAs

Authors

Maria Herminia Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We used transient reflectance spectroscopy to measure sub-picosecond carrier lifetimes from GaAs films grown at temperatures of 220°C, 270°C, and 310°C and annealed at 550°C. The carrier lifetime and THz emission intensity increases with growth temperature. The shorter lifetimes are attributed to an increase in the number of defect centers incorporated during low temperature growth which corresponds to more carrier traps and lower carrier mobility. The transient reflectance technique may be used to investigate carrier lifetimes from other semiconductors.

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Issue

2014: Proceedings of the 32nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2014-4A-05

Section

Condensed Matter Physics

Published

2014-10-17

How to Cite

[1]

MH Balgos, J Muldera, EA Prieto, A Somintac, A Salvador, and E Estacio, Subpicosecond carrier lifetime measurements using transient reflectance spectroscopy of MBE-grown low temperature GaAs, Proceedings of the Samahang Pisika ng Pilipinas 32, SPP2014-4A-05 (2014). URL: https://proceedings.spp-online.org/article/view/1810.