Electric field profiles of LTG-GaAs/GaAs and LTG-GaAs/n-GaAs samples
Abstract
We demonstrate the significance of incorporating an n-GaAs buffer in an LTG-GaAs epitaxial layer by comparing it to an undoped GaAs buffer in an LTG-GaAs epitaxial layer. The interface electric field of the LTG-GaAs/n-GaAs/SI-GaAs sample differed by as much as 147% in comparison to that of the LTG-GaAs/GaAS/SI-GaAs sample. Inclusion of n-GaAs buffer before deposition of LTG-GaAs resulted to a greater electric field. These samples were examined by constructing their energy band diagram, consequently deriving their electric fields. The calculated values were experimentally verified by performing photoreflectance spectroscopy.