Electric field profiles of LTG-GaAs/GaAs and LTG-GaAs/n-GaAs samples

Authors

  • Rosa Linda B. Miranda ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Crizia C. Alcantara ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jermaine Nicole A. Barce ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Alexander E. De los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Sheryl Ann B. Vizcara ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • John Daniel E. Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann P. Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elmer S. Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We demonstrate the significance of incorporating an n-GaAs buffer in an LTG-GaAs epitaxial layer by comparing it to an undoped GaAs buffer in an LTG-GaAs epitaxial layer. The interface electric field of the LTG-GaAs/n-GaAs/SI-GaAs sample differed by as much as 147% in comparison to that of the LTG-GaAs/GaAS/SI-GaAs sample. Inclusion of n-GaAs buffer before deposition of LTG-GaAs resulted to a greater electric field. These samples were examined by constructing their energy band diagram, consequently deriving their electric fields. The calculated values were experimentally verified by performing photoreflectance spectroscopy.

Published

2014-10-17

How to Cite

[1]
Electric field profiles of LTG-GaAs/GaAs and LTG-GaAs/n-GaAs samples, Proceedings of the Samahang Pisika ng Pilipinas 32, (2014). URL: https://proceedings.spp-online.org/article/view/1797.