Deposition of Nd:YAG on silicon using femtosecond pulsed laser deposition in oxygen background gas
Abstract
Nd:YAG were grown on silicon (100) using femtosecond pulsed laser deposition. The deposition was carried out in an oxygen background gas with pressures 2x10<sup>-2</sup> and 6x10<sup>-2</sup> mbar. Scanning electron microscopy and image analysis were used to determine the surface morphology and the particles size distribution of the deposited materials, respectively. SEM images showed that addition of oxygen in the deposition process decreased microcracks and increased substrate coverage area. The material deposited with high oxygen pressure revealed spheroidal and sharply edged particles. Plot distributions show that particle size range in the micron level and were independent of the oxygen background gas. It was also observed that particle size varies proportionally with oxygen pressure.
Downloads
Published
Issue
Section
License
By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.
