Deposition of Nd:YAG on silicon using femtosecond pulsed laser deposition in oxygen background gas
Abstract
Nd:YAG were grown on silicon (100) using femtosecond pulsed laser deposition. The deposition was carried out in an oxygen background gas with pressures 2x10<sup>-2</sup> and 6x10<sup>-2</sup> mbar. Scanning electron microscopy and image analysis were used to determine the surface morphology and the particles size distribution of the deposited materials, respectively. SEM images showed that addition of oxygen in the deposition process decreased microcracks and increased substrate coverage area. The material deposited with high oxygen pressure revealed spheroidal and sharply edged particles. Plot distributions show that particle size range in the micron level and were independent of the oxygen background gas. It was also observed that particle size varies proportionally with oxygen pressure.