Measurement of low temperature-grown GaAs carrier lifetime by double pump terahertz time-domain spectroscopy

Authors

Valynn Katrine Mag-usara ⋅ JP Research Center for the Development of Far-Infrared Region, University of Fukui
Stefan Funkner ⋅ JP Research Center for the Development of Far-Infrared Region, University of Fukui
Gudrun Niehues ⋅ JP Research Center for the Development of Far-Infrared Region, University of Fukui
Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kohji Yamamoto ⋅ JP Research Center for the Development of Far-Infrared Region, University of Fukui
Muneaki Hase ⋅ JP Institute of Applied Physics, University of Tsukuba
Masahiko Tani ⋅ JP Research Center for the Development of Far-Infrared Region, University of Fukui

Abstract

We propose and demonstrate "double pump" terahertz time-domain spectroscopy as an alternative technique to obtain information on the carrier lifetime of low temperature-grown gallium arsenide (LT-GaAs). Initial results show good agreement with data obtained from standard transient reflectance measurements done on the same LT-GaAs samples.

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Published

2014-10-17

Issue

2014: Proceedings of the 32nd Samahang Pisika ng Pilipinas Physics Congress

Section

Invited Presentations

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How to Cite

[1]

“Measurement of low temperature-grown GaAs carrier lifetime by double pump terahertz time-domain spectroscopy”, Proc. SPP, vol. 32, no. 1, pp. SPP2014–4A, Oct. 2014, Accessed: Apr. 18, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/1773