Measurement of low temperature-grown GaAs carrier lifetime by double pump terahertz time-domain spectroscopy
Abstract
We propose and demonstrate "double pump" terahertz time-domain spectroscopy as an alternative technique to obtain information on the carrier lifetime of low temperature-grown gallium arsenide (LT-GaAs). Initial results show good agreement with data obtained from standard transient reflectance measurements done on the same LT-GaAs samples.
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Towards enhanced physics research and education
17-20 October 2014, University of Philippines Diliman, Quezon City