Measurement of low temperature-grown GaAs carrier lifetime by double pump terahertz time-domain spectroscopy

Authors

Valynn Katrine Mag-usara Research Center for the Development of Far-Infrared Region, University of Fukui
Stefan Funkner Research Center for the Development of Far-Infrared Region, University of Fukui
Gudrun Niehues Research Center for the Development of Far-Infrared Region, University of Fukui
Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Kohji Yamamoto Research Center for the Development of Far-Infrared Region, University of Fukui
Muneaki Hase Institute of Applied Physics, University of Tsukuba
Masahiko Tani Research Center for the Development of Far-Infrared Region, University of Fukui

Abstract

We propose and demonstrate "double pump" terahertz time-domain spectroscopy as an alternative technique to obtain information on the carrier lifetime of low temperature-grown gallium arsenide (LT-GaAs). Initial results show good agreement with data obtained from standard transient reflectance measurements done on the same LT-GaAs samples.

Downloads

Issue

2014: Proceedings of the 32nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2014-4A-01

Section

Invited Presentations

Published

2014-10-17

How to Cite

[1]

VK Mag-usara, S Funkner, G Niehues, EA Prieto, A Somintac, E Estacio, A Salvador, K Yamamoto, M Hase, and M Tani, Measurement of low temperature-grown GaAs carrier lifetime by double pump terahertz time-domain spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 32, SPP2014-4A-01 (2014). URL: https://proceedings.spp-online.org/article/view/1773.