Surface modification of (100) p-type silicon through Ar-O₂ and Ar-N₂ plasma treatment

Authors

Vincent Requero Mejarito ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Audric Zuriel Cruz Cruz ⋅ PH Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman
Magdaleno Vasquez ⋅ PH Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman
Arnel A Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Silicon wafers were surface modified by the treatment of argon-oxygen (Ar-O₂) and argon-nitrogen (Ar-N₂) RF-frequency plasma, and characterized their changes in surface property using contact angle measurement and Fourier transform infrared spectroscopy (FTIR). The treatment of silicon wafers by Ar-O₂ and Ar-N₂ resulted in increased hydrophilicity for both treatment regimes. Silicon treated Ar-N₂ plasma sample has the greater surface free energy compared to Silicon treated Ar-O₂ plasma and the untreated sample. Subsequent Fourier-transform infrared spectroscopy results confirmed the presence of characteristic Si-O and Si-N bonds; however, due to the adsorbence of water, many of these peaks were not readily apparent. Surface morphological studies may be performed in order to view further effects of the plasma treatment.

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Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2017-PA-05

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2017-06-07

How to Cite

[1]

VR Mejarito, AZC Cruz, M Vasquez, and AA Salvador, Surface modification of (100) p-type silicon through Ar-O2 and Ar-N2 plasma treatment, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-PA-05 (2017). URL: https://proceedings.spp-online.org/article/view/148.