Graphite films grown via fs-pulsed laser deposition at different temperatures
Abstract
Graphite was deposited on Si (100) via femtosecond pulsed laser deposition. The films were grown at varying temperature of 300-600 ºC and were characterized by scanning electron microscopy (SEM) and Raman spectroscopy to reveal the morphological and structural properties, respectively. The Raman spectra of films grown at elevated temperature showed a preferential band (G band) which is attributed to the sp2 bond of graphite. At 600°C is seen to be the sufficient temperature to develop the structural component of graphite. SEM images showed a flake-like structures and randomly sized particles. As the deposition temperature increases the particles also increase in size about micrometer. However, a further increase in temperature showed evidence of melting and clustering of particles.