Graphite films grown via fs-pulsed laser deposition at different temperatures

Authors

  • Mary Ann Calleja National Institute of Physics, University of the Philippines Diliman
  • Jessa Jayne Miranda National Institute of Physics, University of the Philippines Diliman
  • Wilson Garcia National Institute of Physics, University of the Philippines Diliman

Abstract

Graphite was deposited on Si (100) via femtosecond pulsed laser deposition. The films were grown at varying temperature of 300-600 ºC and were characterized by scanning electron microscopy (SEM) and Raman spectroscopy to reveal the morphological and structural properties, respectively. The Raman spectra of films grown at elevated temperature showed a preferential band (G band) which is attributed to the sp2 bond of graphite. At 600°C is seen to be the sufficient temperature to develop the structural component of graphite. SEM images showed a flake-like structures and randomly sized particles. As the deposition temperature increases the particles also increase in size about micrometer. However, a further increase in temperature showed evidence of melting and clustering of particles.

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Issue

Article ID

SPP-2015-PB-21

Section

Poster Session PB

Published

2015-06-03

How to Cite

[1]
MA Calleja, JJ Miranda, and W Garcia, Graphite films grown via fs-pulsed laser deposition at different temperatures, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-PB-21 (2015). URL: https://proceedings.spp-online.org/article/view/1227.