Electrical properties of Schottky-Ohmic pair contact compared to Schottky-Schottky and Ohmic-Ohmic pair contact in planar configuration
Abstract
Schottky and Ohmic contacts were deposited on nGaAs substrates using AuBe and AuGe respectively fabricated in a planar configuration. Samples with finger patterns of Schottky-Ohmic pair, Schottky-Schottky pair, and Ohmic-Ohmic pair contact had their I-V characteristics measured. I-V characteristics were also measured after annealing the 3 samples at 460 C for 30 seconds. The Schottky barrier heights and series resistances were computed. It was observed that the electrical properties of the Schottky and Ohmic contacts used have certain effects on the Schottky-Ohmic pair.
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