Investigation of terahertz mechanism in GaAs-on-Si(100)

Authors

Joselito E. Muldera National Institute of Physics, University of the Philippines Diliman
Maria Herminia M. Balgos National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
Karl Cedric Gonzales National Institute of Physics, University of the Philippines Diliman
Cyril P. Sadia National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

We investigate the terahertz (THz) mechanism in GaAs films deposited on Si substrates (GaAs/Si). THz radiation is observed from femtosecond laser-excited GaAs/Si in the reflection geometry. In particular, SI-GaAs/Si exhibits the strongest emission compared to the other GaAs-based samples and comparable to bulk p-InAs which is the currently-accepted strongest THz emitter. The GaAs/Si films have no significant azimuthal angle dependence of THz signal amplitude. Pump excitation power experiments show that SI-GaAs/Si has a higher saturation value than p-InAs due to the laser's deeper penetration depth in GaAs as compared to that of p-InAs. In addition, the type of doping could greatly affect the THz emission properties of the GaAs/Si film. This enhancement in THz radiation in GaAs/Si could be attributed to surge current by the acceleration of photo-generated carriers in the surface field and not to nonlinear optical rectification effect.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-PB-04

Section

Poster Session PB

Published

2015-06-03

How to Cite

[1]

JE Muldera, MHM Balgos, L Lopez, EA Prieto, KC Gonzales, CP Sadia, AS Somintac, AA Salvador, and ES Estacio, Investigation of terahertz mechanism in GaAs-on-Si(100), Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-PB-04 (2015). URL: https://proceedings.spp-online.org/article/view/1210.