Investigation of terahertz mechanism in GaAs-on-Si(100)

Authors

Joselito E. Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Herminia M. Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Karl Cedric Gonzales ⋅ PH National Institute of Physics, University of the Philippines Diliman
Cyril P. Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We investigate the terahertz (THz) mechanism in GaAs films deposited on Si substrates (GaAs/Si). THz radiation is observed from femtosecond laser-excited GaAs/Si in the reflection geometry. In particular, SI-GaAs/Si exhibits the strongest emission compared to the other GaAs-based samples and comparable to bulk p-InAs which is the currently-accepted strongest THz emitter. The GaAs/Si films have no significant azimuthal angle dependence of THz signal amplitude. Pump excitation power experiments show that SI-GaAs/Si has a higher saturation value than p-InAs due to the laser's deeper penetration depth in GaAs as compared to that of p-InAs. In addition, the type of doping could greatly affect the THz emission properties of the GaAs/Si film. This enhancement in THz radiation in GaAs/Si could be attributed to surge current by the acceleration of photo-generated carriers in the surface field and not to nonlinear optical rectification effect.

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Published

2015-06-03

Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PB

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How to Cite

[1]

“Investigation of terahertz mechanism in GaAs-on-Si(100)”, Proc. SPP, vol. 33, no. 1, p. SPP-2015-PB-04, Jun. 2015, Accessed: Apr. 15, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/1210