Development of zinc oxide film as an anti-reflection coating for low-temperature-grown gallium arsenide infrared photodetector
Abstract
This work focuses on the signal enhancement from gallium arsenide photodetectors upon coating of an anti-reflection coating based on zinc oxide. The crystallinity and uniformity of the grown gallium arsenide substrate and the deposited zinc oxide film was confirmed using x-ray diffraction data and scanning electron microscope images respectively. Photocurrent spectroscopy presents the significant improvement in the spectral responsivity of the device upon deposition of zinc oxide film on the low-temperature-grown gallium arsenide infrared photodetector.