Surface topographic analysis of Er:YAG on silicon grown by femtosecond pulsed laser deposition

Authors

Floyd Willis I. Patricio National Institute of Physics, University of the Philippines Diliman
Arriane P. Lacaba National Institute of Physics, University of the Philippines Diliman
Lean L. Dasallas National Institute of Physics, University of the Philippines Diliman
Wilson O. Garcia National Institute of Physics, University of the Philippines Diliman

Abstract

Erbium-doped YAG were grown on a silicon (100) substrate by femtosecond pulsed laser deposition using a mode-locked Ti:Sapphire pulsed laser operating at 82 MHz repetition rate and 80 fs pulse duration. Deposition was carried out at laser power of 400 mW and 800 mW, with deposition time of 2 hours, 3 hours and 4 hours. AFM image analysis of all samples showed that grain size and surface RMS roughness increase with deposition time. Less rough surface and smaller grains were also observed on samples deposited in higher laser power.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-PA-16

Section

Poster Session PA

Published

2015-06-03

How to Cite

[1]

FWI Patricio, AP Lacaba, LL Dasallas, and WO Garcia, Surface topographic analysis of Er:YAG on silicon grown by femtosecond pulsed laser deposition, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-PA-16 (2015). URL: https://proceedings.spp-online.org/article/view/1175.