Externally applied magnetic field-effects on the teraHertz emission from p-type and n-type InAs wafers

Authors

Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
Sheryl Ann Vizcara National Institute of Physics, University of the Philippines Diliman
Joselito Muldera National Institute of Physics, University of the Philippines Diliman
Hannah Rillera Bardolaza National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez National Institute of Physics, University of the Philippines Diliman
Ramon Delos Santos National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Kohji Yamamoto Research Center for Development of Far-Infrared Region, University of Fukui
Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
Elmer Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

In this work, we report the enhanced terahertz emission from p-type and n-type InAs substrates under an external magnetic field applied parallel to the surface. Magnetic field effects on the THz-TDS line shape were studied for both upward and downward magnetic field orientations using a 650 mT permanent magnet. A 180⁰ phase shift was observed in both the p-type and n-type InAs samples upon reversal of the magnetic field orientation. A higher degree of magnetic field-induced enhancement was observed in n-type InAs than in p-type InAs. Furthermore, the magnetic field-enhancement in p-type InAs is higher when the magnetic field orientation is upward while the enhancement in n-type InAs is higher when the magnetic field orientation is downward. These results were attributed to carrier drifts induced by the built-in surface electric field and external magnetic field.

Downloads

Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-5A-06

Section

Photonics and Terahertz, Optics and Signal Processing

Published

2015-06-03

How to Cite

[1]

A De Los Reyes, SA Vizcara, J Muldera, HR Bardolaza, L Lopez, R Delos Santos, A Somintac, A Salvador, K Yamamoto, M Tani, and E Estacio, Externally applied magnetic field-effects on the teraHertz emission from p-type and n-type InAs wafers, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-5A-06 (2015). URL: https://proceedings.spp-online.org/article/view/1138.