Externally applied magnetic field-effects on the teraHertz emission from p-type and n-type InAs wafers

Authors

Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Sheryl Ann Vizcara ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Hannah Rillera Bardolaza ⋅ PH National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ramon Delos Santos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kohji Yamamoto ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this work, we report the enhanced terahertz emission from p-type and n-type InAs substrates under an external magnetic field applied parallel to the surface. Magnetic field effects on the THz-TDS line shape were studied for both upward and downward magnetic field orientations using a 650 mT permanent magnet. A 180⁰ phase shift was observed in both the p-type and n-type InAs samples upon reversal of the magnetic field orientation. A higher degree of magnetic field-induced enhancement was observed in n-type InAs than in p-type InAs. Furthermore, the magnetic field-enhancement in p-type InAs is higher when the magnetic field orientation is upward while the enhancement in n-type InAs is higher when the magnetic field orientation is downward. These results were attributed to carrier drifts induced by the built-in surface electric field and external magnetic field.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-5A-06

Section

Photonics and Terahertz, Optics and Signal Processing

Published

2015-06-03

How to Cite

[1]

A De Los Reyes, SA Vizcara, J Muldera, HR Bardolaza, L Lopez, R Delos Santos, A Somintac, A Salvador, K Yamamoto, M Tani, and E Estacio, Externally applied magnetic field-effects on the teraHertz emission from p-type and n-type InAs wafers, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-5A-06 (2015). URL: https://proceedings.spp-online.org/article/view/1138.