Externally applied magnetic field-effects on the teraHertz emission from p-type and n-type InAs wafers

Authors

  • Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Sheryl Ann Vizcara National Institute of Physics, University of the Philippines Diliman
  • Joselito Muldera National Institute of Physics, University of the Philippines Diliman
  • Hannah Rillera Bardolaza National Institute of Physics, University of the Philippines Diliman
  • Lorenzo Lopez National Institute of Physics, University of the Philippines Diliman
  • Ramon Delos Santos National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Kohji Yamamoto Research Center for Development of Far-Infrared Region, University of Fukui
  • Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

In this work, we report the enhanced terahertz emission from p-type and n-type InAs substrates under an external magnetic field applied parallel to the surface. Magnetic field effects on the THz-TDS line shape were studied for both upward and downward magnetic field orientations using a 650 mT permanent magnet. A 180â° phase shift was observed in both the p-type and n-type InAs samples upon reversal of the magnetic field orientation. A higher degree of magnetic field-induced enhancement was observed in n-type InAs than in p-type InAs. Furthermore, the magnetic field-enhancement in p-type InAs is higher when the magnetic field orientation is upward while the enhancement in n-type InAs is higher when the magnetic field orientation is downward. These results were attributed to carrier drifts induced by the built-in surface electric field and external magnetic field.

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Published

2015-06-03

Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Section

Photonics and Terahertz, Optics and Signal Processing

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Externally applied magnetic field-effects on the teraHertz emission from p-type and n-type InAs wafers”, Proc. SPP, vol. 33, no. 1, pp. SPP–2015, Jun. 2015, Accessed: Mar. 29, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/1138