XPS surface analysis of as-deposited titanium nitride on silicon fabricated using a modified magnetized sheet plasma source
Abstract
The surface quality of the titanium nitride (TiN) thin film fabricated in a modified magnetized sheet plasma source was analyzed using X-ray photoelectron spectroscopy (XPS). The TiN film was deposited at 1.3 kV titanium target bias on Si (100) and was confirmed to be predominantly (111) oriented by XRD. XPS surface analysis of the as-deposited film indicated the presence of oxygen and carbon peaks aside from the titanium and nitride peaks, suggesting contamination and oxide formation on the topmost layer of the film. High resolution XPS scans of the carbon, nitrogen and oxygen peaks revealed the complex bonds existing due to the contaminants on the surface of the film.
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