[1]
Baldo, C., Azares, J., Prieto, E.A., Constantino, J.A., Empizo, M.J., Defensor, M., IbaƱes, J. and Salvador, A. 2008. Optimization of the growth design of the MBE-grown delta-doped InxGa1-xAs pseudomorphic high-electron mobility transistor (pHEMT). Proceedings of the Samahang Pisika ng Pilipinas, 26(1), SPP-2008-3A-03. URL: https://proceedings.spp-online.org/article/view/SPP-2008-3A-03.